At NSN Unlimited, we maintain a large database of parts RELEASE5345, FN815, 804889, 657991, 352-0898-010 with NSN 5961-00-110-9356 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Electronic Industries Inc, L3 Communications Corp, Acterna Deutschland Gmbh, Siliconix Ltd, National Semiconductor Corp. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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| Alternative NSN: 5961-00-110-9356 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001109356 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Inc , L3 Communications Corp , Acterna Deutschland Gmbh , Siliconix Ltd , National Semiconductor Corp , N A I Technologies Inc , Raytheon Technical Services Company , Rockwell Collins Inc , Union Carbide Corp , Telcom Semiconductor Inc , General Electric Inc , Honeywell International Inc , Hewlett Packard Inc |
| Part No | NSN | Item Name | Manufacturer | QTY | RFQ |
|---|---|---|---|---|---|
| RELEASE5345 | 5961-00-110-9356 | transistor | electronic industries inc | Avl | RFQ |
| FN815 | 5961-00-110-9356 | transistor | l3 communications corp | Avl | RFQ |
| FN815 | 5961-00-110-9356 | transistor | acterna deutschland gmbh | Avl | RFQ |
| FN815 | 5961-00-110-9356 | transistor | siliconix ltd | Avl | RFQ |
| FN815 | 5961-00-110-9356 | transistor | national semiconductor corp | Avl | RFQ |
| 804889 | 5961-00-110-9356 | transistor | national semiconductor corp | Avl | RFQ |
| 804889 | 5961-00-110-9356 | transistor | acterna deutschland gmbh | Avl | RFQ |
| 804889 | 5961-00-110-9356 | transistor | l3 communications corp | Avl | RFQ |
| 804889 | 5961-00-110-9356 | transistor | n a i technologies inc | Avl | RFQ |
| 657991 | 5961-00-110-9356 | transistor | l3 communications corp | Avl | RFQ |
| 657991 | 5961-00-110-9356 | transistor | raytheon technical services company | Avl | RFQ |
| 352-0898-010 | 5961-00-110-9356 | transistor | rockwell collins inc | Avl | RFQ |
| 2N4391 | 5961-00-110-9356 | transistor | union carbide corp | Avl | RFQ |
| 2N4391 | 5961-00-110-9356 | transistor | telcom semiconductor inc | Avl | RFQ |
| 2N4391 | 5961-00-110-9356 | transistor | national semiconductor corp | Avl | RFQ |
| 2N4391 | 5961-00-110-9356 | transistor | electronic industries inc | Avl | RFQ |
| 19A134093P1 | 5961-00-110-9356 | transistor | general electric inc | Avl | RFQ |
| 1992402-1 | 5961-00-110-9356 | transistor | national semiconductor corp | Avl | RFQ |
| 1992402-1 | 5961-00-110-9356 | transistor | l3 communications corp | Avl | RFQ |
| 1992402-1 | 5961-00-110-9356 | transistor | honeywell international inc | Avl | RFQ |
| 1992402-1 | 5961-00-110-9356 | transistor | acterna deutschland gmbh | Avl | RFQ |
| 1855-0420 | 5961-00-110-9356 | transistor | acterna deutschland gmbh | Avl | RFQ |
| 1855-0420 | 5961-00-110-9356 | transistor | hewlett packard inc | Avl | RFQ |
| 1855-0420 | 5961-00-110-9356 | transistor | l3 communications corp | Avl | RFQ |
| 1855-0420 | 5961-00-110-9356 | transistor | national semiconductor corp | Avl | RFQ |
| 185-2058P1-8608 | 5961-00-110-9356 | transistor | national semiconductor corp | Avl | RFQ |
| 185-2058P1-8608 | 5961-00-110-9356 | transistor | l3 communications corp | Avl | RFQ |
| 185-2058P1-8608 | 5961-00-110-9356 | transistor | acterna deutschland gmbh | Avl | RFQ |
| 185-2058P1-8608 | 5961-00-110-9356 | transistor | general electric inc | Avl | RFQ |
| 185-2058P1-426 | 5961-00-110-9356 | transistor | general electric inc | Avl | RFQ |
| 0001-0068.333 | 5961-00-110-9356 | transistor | acterna deutschland gmbh | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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