At NSN Unlimited, we maintain a large database of parts JAN2N964, 89020-015, 5961PL0981240, 5961002268581, 4192800-118 with NSN 5961-00-226-8581 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Joint Electron Device Engineering, Raytheon Company, L3 Communications Corp, Inspektorat Wsparcia Sil Zbrojnych, E C A Etablissement Central. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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| Alternative NSN: 5961-00-226-8581 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 002268581 |
| NCB Code: USA (00) |
| Manufacturers: Joint Electron Device Engineering , Raytheon Company , L3 Communications Corp , Inspektorat Wsparcia Sil Zbrojnych , E C A Etablissement Central , Semiconductor Technology Inc , Hewlett Packard Inc , Bei Sensors And Systems Company Inc |
| Part No | NSN | Item Name | Manufacturer | QTY | RFQ |
|---|---|---|---|---|---|
| JAN2N964 | 5961-00-226-8581 | transistor | joint electron device engineering | Avl | RFQ |
| JAN2N964 | 5961-00-226-8581 | transistor | raytheon company | Avl | RFQ |
| 89020-015 | 5961-00-226-8581 | transistor | l3 communications corp | Avl | RFQ |
| 5961PL0981240 | 5961-00-226-8581 | transistor | inspektorat wsparcia sil zbrojnych | Avl | RFQ |
| 5961002268581 | 5961-00-226-8581 | transistor | e c a etablissement central | Avl | RFQ |
| 4192800-118 | 5961-00-226-8581 | transistor | joint electron device engineering | Avl | RFQ |
| 4192800-118 | 5961-00-226-8581 | transistor | raytheon company | Avl | RFQ |
| 2N964 | 5961-00-226-8581 | transistor | semiconductor technology inc | Avl | RFQ |
| 2N964 | 5961-00-226-8581 | transistor | raytheon company | Avl | RFQ |
| 2N964 | 5961-00-226-8581 | transistor | joint electron device engineering | Avl | RFQ |
| 1850-0099 | 5961-00-226-8581 | transistor | hewlett packard inc | Avl | RFQ |
| 1850-0099 | 5961-00-226-8581 | transistor | raytheon company | Avl | RFQ |
| 1850-0099 | 5961-00-226-8581 | transistor | joint electron device engineering | Avl | RFQ |
| 14000 | 5961-00-226-8581 | transistor | raytheon company | Avl | RFQ |
| 14000 | 5961-00-226-8581 | transistor | joint electron device engineering | Avl | RFQ |
| 14000 | 5961-00-226-8581 | transistor | bei sensors and systems company inc | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | GERMANIUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -2.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/258 GOVERNMENT SPECIFICATION |
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