At NSN Unlimited, we maintain a large database of parts MIL-S-19500 65, JAN2N388, DMS 89127B, 5961PL0982756, 4192800-15 with NSN 5961-00-752-5362 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Joint Electron Device Engineering, Dla Land And Maritime, Inspektorat Wsparcia Sil Zbrojnych, Raytheon Company. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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| Alternative NSN: 5961-00-752-5362 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 007525362 |
| NCB Code: USA (00) |
| Manufacturers: Joint Electron Device Engineering , Dla Land And Maritime , Inspektorat Wsparcia Sil Zbrojnych , Raytheon Company |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.260 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| CTMZ | III SEMICONDUCTOR MATERIAL | GERMANIUM |
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