NSN 5961-01-119-8257 (5961011198257) Datasheet

At NSN Unlimited, we maintain a large database of parts 63SE123, 63SE167, BACSH2P1, BACSH2P2, SCA15091 with NSN 5961-01-119-8257 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Solitron Devices Inc, The Boeing Company, Falkor Partners Llc. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.

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Alternative NSN: 5961-01-119-8257
Item Name: Transistor
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 011198257
NCB Code: USA (01)
Manufacturers: Solitron Devices Inc , The Boeing Company , Falkor Partners Llc

Cross Reference | NSN 5961011198257

Part No NSN Item Name Manufacturer QTY RFQ
63SE123 5961-01-119-8257 transistor solitron devices inc Avl RFQ
63SE123 5961-01-119-8257 transistor the boeing company Avl RFQ
63SE123 5961-01-119-8257 transistor falkor partners llc Avl RFQ
63SE167 5961-01-119-8257 transistor falkor partners llc Avl RFQ
63SE167 5961-01-119-8257 transistor the boeing company Avl RFQ
63SE167 5961-01-119-8257 transistor solitron devices inc Avl RFQ
BACSH2P1 5961-01-119-8257 transistor the boeing company Avl RFQ
BACSH2P1 5961-01-119-8257 transistor solitron devices inc Avl RFQ
BACSH2P1 5961-01-119-8257 transistor falkor partners llc Avl RFQ
BACSH2P2 5961-01-119-8257 transistor falkor partners llc Avl RFQ
BACSH2P2 5961-01-119-8257 transistor solitron devices inc Avl RFQ
BACSH2P2 5961-01-119-8257 transistor the boeing company Avl RFQ
SCA15091 5961-01-119-8257 transistor the boeing company Avl RFQ
SCA15091 5961-01-119-8257 transistor solitron devices inc Avl RFQ
SCA15091 5961-01-119-8257 transistor falkor partners llc Avl RFQ

Technical Data | NSN 5961011198257

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH0.450 INCHES MAXIMUM
ADAVOVERALL DIAMETER1.050 INCHES MAXIMUM
AKPVMOUNTING FACILITY QUANTITY2
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
ALBAELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASECOLLECTOR
AXGYMOUNTING METHODUNTHREADED HOLE
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC-100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 180.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -5.5
CTQXCURRENT RATING PER CHARACTERISTIC-10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -4.00 AMPERES MAXIMUM BASE CURRENT, DC
CTRDPOWER RATING PER CHARACTERISTIC5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
FEATSPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
NHCFNUCLEAR HARDNESS CRITICAL FEATUREHARDENED
TTQYTERMINAL TYPE AND QUANTITY1 CASE AND 2 UNINSULATED WIRE LEAD

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