At NSN Unlimited, we maintain a large database of parts RELEASE 6613, C413N, 2N6550 with NSN 5961-01-140-2830 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Teledyne Industries Inc, Electronic Industries Inc, Crystalonics Inc. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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| Alternative NSN: 5961-01-140-2830 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011402830 |
| NCB Code: USA (01) |
| Manufacturers: Teledyne Industries Inc , Electronic Industries Inc , Crystalonics Inc |
| Part No | NSN | Item Name | Manufacturer | QTY | RFQ |
|---|---|---|---|---|---|
| RELEASE 6613 | 5961-01-140-2830 | transistor | teledyne industries inc | Avl | RFQ |
| RELEASE 6613 | 5961-01-140-2830 | transistor | electronic industries inc | Avl | RFQ |
| RELEASE 6613 | 5961-01-140-2830 | transistor | crystalonics inc | Avl | RFQ |
| C413N | 5961-01-140-2830 | transistor | crystalonics inc | Avl | RFQ |
| C413N | 5961-01-140-2830 | transistor | electronic industries inc | Avl | RFQ |
| C413N | 5961-01-140-2830 | transistor | teledyne industries inc | Avl | RFQ |
| 2N6550 | 5961-01-140-2830 | transistor | teledyne industries inc | Avl | RFQ |
| 2N6550 | 5961-01-140-2830 | transistor | electronic industries inc | Avl | RFQ |
| 2N6550 | 5961-01-140-2830 | transistor | crystalonics inc | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-46 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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