At NSN Unlimited, we maintain a large database of parts R0-3-2513-001, R0-3-2513, DMS 89015B, 2513N CM2140, 2513 with NSN 5962-01-081-4889 used in civil and defense applications for the aerospace, marine, and commercial manufactured by General Semiconductor Inc, Microchip Technology Incorporated, Dla Land And Maritime, Philips Semiconductors Ltd, Aydin Corp. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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| Alternative NSN: 5962-01-081-4889 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010814889 |
| NCB Code: USA (01) |
| Manufacturers: General Semiconductor Inc , Microchip Technology Incorporated , Dla Land And Maritime , Philips Semiconductors Ltd , Aydin Corp |
| Part No | NSN | Item Name | Manufacturer | QTY | RFQ |
|---|---|---|---|---|---|
| R0-3-2513-001 | 5962-01-081-4889 | microcircuit memory | general semiconductor inc | Avl | RFQ |
| R0-3-2513-001 | 5962-01-081-4889 | microcircuit memory | microchip technology incorporated | Avl | RFQ |
| R0-3-2513 | 5962-01-081-4889 | microcircuit memory | general semiconductor inc | Avl | RFQ |
| DMS 89015B | 5962-01-081-4889 | microcircuit memory | dla land and maritime | Avl | RFQ |
| 2513N CM2140 | 5962-01-081-4889 | microcircuit memory | philips semiconductors ltd | Avl | RFQ |
| 2513 | 5962-01-081-4889 | microcircuit memory | philips semiconductors ltd | Avl | RFQ |
| 139-361-001 | 5962-01-081-4889 | microcircuit memory | aydin corp | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 175.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 8.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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