At NSN Unlimited, we maintain a large database of parts SMJ2516-35JM, SMC2516-35JM, 23884 with NSN 5962-01-158-7419 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Texas Instruments Incorporated, Smiths Aerospace Ltd, Dla Land And Maritime. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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Alternative NSN: 5962-01-158-7419 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011587419 |
NCB Code: USA (01) |
Manufacturers: Texas Instruments Incorporated , Smiths Aerospace Ltd , Dla Land And Maritime |
Part No | NSN | Item Name | Manufacturer | QTY | RFQ |
---|---|---|---|---|---|
SMJ2516-35JM | 5962-01-158-7419 | microcircuit memory | texas instruments incorporated | Avl | RFQ |
SMJ2516-35JM | 5962-01-158-7419 | microcircuit memory | smiths aerospace ltd | Avl | RFQ |
SMJ2516-35JM | 5962-01-158-7419 | microcircuit memory | dla land and maritime | Avl | RFQ |
SMC2516-35JM | 5962-01-158-7419 | microcircuit memory | dla land and maritime | Avl | RFQ |
SMC2516-35JM | 5962-01-158-7419 | microcircuit memory | smiths aerospace ltd | Avl | RFQ |
SMC2516-35JM | 5962-01-158-7419 | microcircuit memory | texas instruments incorporated | Avl | RFQ |
23884 | 5962-01-158-7419 | microcircuit memory | texas instruments incorporated | Avl | RFQ |
23884 | 5962-01-158-7419 | microcircuit memory | smiths aerospace ltd | Avl | RFQ |
23884 | 5962-01-158-7419 | microcircuit memory | dla land and maritime | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 600 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 205 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING285 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDLOW POWER AND ERASABLE AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
MEMORY | CRHL | BIT QUANTITY16384 |
MEMORY | CSWJ | WORD QUANTITY2048 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC350 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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