At NSN Unlimited, we maintain a large database of parts 585R727H02 with NSN 5962-01-226-3025 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Sgs Thomson Microelectronics Inc, Integrated Device Technology Inc, Fujitsu Microelectronics Inc. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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| Alternative NSN: 5962-01-226-3025 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012263025 |
| NCB Code: USA (01) |
| Manufacturers: Sgs Thomson Microelectronics Inc , Integrated Device Technology Inc , Fujitsu Microelectronics Inc |
| Part No | NSN | Item Name | Manufacturer | QTY | RFQ |
|---|---|---|---|---|---|
| 585R727H02 | 5962-01-226-3025 | microcircuit memory | sgs thomson microelectronics inc | Avl | RFQ |
| 585R727H02 | 5962-01-226-3025 | microcircuit memory | integrated device technology inc | Avl | RFQ |
| 585R727H02 | 5962-01-226-3025 | microcircuit memory | fujitsu microelectronics inc | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 130 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN17 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY16384 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM SUPPLY |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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