At NSN Unlimited, we maintain a large database of parts PROM ROM HEAD 213, PAL16L8A-2ML 883B, PAL16L8A-2MFKB, AMPAL16L8L B2A, 81036112X with NSN 5962-01-264-3011 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Advanced Micro Devices Inc, Dla Land And Maritime, Hamilton Sundstrand Corporation, Mmi Amd, Texas Instruments Incorporated. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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| Alternative NSN: 5962-01-264-3011 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012643011 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Hamilton Sundstrand Corporation , Mmi Amd , Texas Instruments Incorporated |
| Part No | NSN | Item Name | Manufacturer | QTY | RFQ |
|---|---|---|---|---|---|
| PROM ROM HEAD 213 | 5962-01-264-3011 | microcircuit memory | advanced micro devices inc | Avl | RFQ |
| PROM ROM HEAD 213 | 5962-01-264-3011 | microcircuit memory | dla land and maritime | Avl | RFQ |
| PROM ROM HEAD 213 | 5962-01-264-3011 | microcircuit memory | hamilton sundstrand corporation | Avl | RFQ |
| PAL16L8A-2ML 883B | 5962-01-264-3011 | microcircuit memory | hamilton sundstrand corporation | Avl | RFQ |
| PAL16L8A-2ML 883B | 5962-01-264-3011 | microcircuit memory | advanced micro devices inc | Avl | RFQ |
| PAL16L8A-2ML 883B | 5962-01-264-3011 | microcircuit memory | dla land and maritime | Avl | RFQ |
| PAL16L8A-2ML 883B | 5962-01-264-3011 | microcircuit memory | mmi amd | Avl | RFQ |
| PAL16L8A-2MFKB | 5962-01-264-3011 | microcircuit memory | texas instruments incorporated | Avl | RFQ |
| AMPAL16L8L B2A | 5962-01-264-3011 | microcircuit memory | advanced micro devices inc | Avl | RFQ |
| 81036112X | 5962-01-264-3011 | microcircuit memory | advanced micro devices inc | Avl | RFQ |
| 81036112X | 5962-01-264-3011 | microcircuit memory | dla land and maritime | Avl | RFQ |
| 81036112X | 5962-01-264-3011 | microcircuit memory | hamilton sundstrand corporation | Avl | RFQ |
| 81036112B | 5962-01-264-3011 | microcircuit memory | dla land and maritime | Avl | RFQ |
| 81036112A | 5962-01-264-3011 | microcircuit memory | advanced micro devices inc | Avl | RFQ |
| 81036112A | 5962-01-264-3011 | microcircuit memory | hamilton sundstrand corporation | Avl | RFQ |
| 81036112A | 5962-01-264-3011 | microcircuit memory | dla land and maritime | Avl | RFQ |
| 81036 | 5962-01-264-3011 | microcircuit memory | dla land and maritime | Avl | RFQ |
| 794952-1-0013 | 5962-01-264-3011 | microcircuit memory | hamilton sundstrand corporation | Avl | RFQ |
| 794952-1 | 5962-01-264-3011 | microcircuit memory | hamilton sundstrand corporation | Avl | RFQ |
| 794952-1 | 5962-01-264-3011 | microcircuit memory | dla land and maritime | Avl | RFQ |
| 794952-1 | 5962-01-264-3011 | microcircuit memory | advanced micro devices inc | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.358 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.358 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.100 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-2 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE NOT APPLICABLE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 LEADLESS |
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