At NSN Unlimited, we maintain a large database of parts IDT7132LA120CB, 312A1837P3, 28734-1600-0004 with NSN 5962-01-303-3548 used in civil and defense applications for the aerospace, marine, and commercial manufactured by Thales Uk Limited, Integrated Device Technology Inc, Bae Systems Controls Inc. Utilize our interface to browse items by part number, part type, manufacturer, and more. Obtain insights on top MRO and FBO services, Manufacturer profiles, and part catalogs.
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| Alternative NSN: 5962-01-303-3548 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013033548 |
| NCB Code: USA (01) |
| Manufacturers: Thales Uk Limited , Integrated Device Technology Inc , Bae Systems Controls Inc |
| Part No | NSN | Item Name | Manufacturer | QTY | RFQ |
|---|---|---|---|---|---|
| IDT7132LA120CB | 5962-01-303-3548 | microcircuit memory | thales uk limited | Avl | RFQ |
| IDT7132LA120CB | 5962-01-303-3548 | microcircuit memory | integrated device technology inc | Avl | RFQ |
| 312A1837P3 | 5962-01-303-3548 | microcircuit memory | integrated device technology inc | Avl | RFQ |
| 312A1837P3 | 5962-01-303-3548 | microcircuit memory | bae systems controls inc | Avl | RFQ |
| 312A1837P3 | 5962-01-303-3548 | microcircuit memory | thales uk limited | Avl | RFQ |
| 28734-1600-0004 | 5962-01-303-3548 | microcircuit memory | thales uk limited | Avl | RFQ |
| 28734-1600-0004 | 5962-01-303-3548 | microcircuit memory | integrated device technology inc | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABKW | OVERALL HEIGHT | 0.220 INCHES MINIMUM AND 0.360 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 2.370 INCHES MINIMUM AND 2.430 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.550 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.030 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 44 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 48 PRINTED CIRCUIT |
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