NSN 5962-01-361-6502 (5962013616502) Datasheet

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Alternative NSN: 5962-01-361-6502
Item Name: Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 013616502
NCB Code: USA (01)
Manufacturers: Cypress Semiconductor Inc , Raytheon Company , Texas Instruments Incorporated

Cross Reference | NSN 5962013616502

Part No NSN Item Name Manufacturer QTY RFQ
HE1285A0D002 5962-01-361-6502 microcircuit memory cypress semiconductor inc Avl RFQ
HE1285A0D002 5962-01-361-6502 microcircuit memory raytheon company Avl RFQ
HE1285A0D002 5962-01-361-6502 microcircuit memory texas instruments incorporated Avl RFQ
CY76263-45DMB 5962-01-361-6502 microcircuit memory texas instruments incorporated Avl RFQ
CY76263-45DMB 5962-01-361-6502 microcircuit memory raytheon company Avl RFQ
CY76263-45DMB 5962-01-361-6502 microcircuit memory cypress semiconductor inc Avl RFQ
654907-2 5962-01-361-6502 microcircuit memory cypress semiconductor inc Avl RFQ
654907-2 5962-01-361-6502 microcircuit memory texas instruments incorporated Avl RFQ
654907 2 5962-01-361-6502 microcircuit memory raytheon company Avl RFQ

Technical Data | NSN 5962013616502

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING660.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQZPINPUT CIRCUIT PATTERN14 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS NOMINAL POWER SOURCE
CZERMEMORY DEVICE TYPEPROM
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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